5'' Mono

MOSPEC Semiconductor Corporation
Cell Type: Monocrystalline
Power Range: 2.64~2.82 Wp
Region: Taiwan Taiwan
Note: Your Enquiry will be sent directly to MOSPEC Semiconductor Corporation.

Alternative Product

From $0.257 / Wp
  • Maximum Power: 4.16 W
  • Cell Type: Polycrystalline
  • Dimensions: 156×156 mm
  • DIAGONAL: 220±20 mm
  • Cell Thickness: 200 µm
  • Pmax: 4.16 W
  • Vmpp: 0.518 V
  • Impp: 8.037 A
  • Voc: 0.621 V
  • Isc: 8.555 A
  • FF: 78.32 %
  • Efficiency: 17.1-17.2 %
  • No. of Busbars: 3
  • Busbar Material: --
  • No. of Soldering Pads: 3
  • Soldering Pad Material: Silver
  • AR Coating: Silicon nitride

Product Characteristics

Model No.
5L 170 5L 171 5L 172 5L 173 5L 174 5L 175 5L 176 5L 177 5L 178 5L 179 5L180 5L 181 5L 182
Product Characteristics  
Cell Technology Monocrystalline
Dimensions 125×125 mm
Diagonal 165±1 mm
Cell Thickness 190 ± 30 µm
Front Surface (-)  
No. of Busbars 2
Busbar Width 62 mm
Anti Reflection Coating Silicon nitride
Back Surface (+)  
No. of Soldering Pads 2
Electrical Data at STC  
Maximum Power (Pmax)
2.64 W 2.65 W 2.66 W 2.68 W 2.7 W 2.72 W 2.73 W 2.75 W 2.77 W 2.78 W 2.8 W 2.81 W 2.82 W
Voltage at Maximum Power Point (Vmpp)
0.514 V 0.515 V 0.516 V 0.517 V 0.519 V 0.519 V 0.52 V 0.523 V 0.524 V 0.525 V 0.525 V 0.525 V 0.526 V
Current at Maximum Power Point (Impp)
5.13 A 5.15 A 5.16 A 5.18 A 5.2 A 5.24 A 5.25 A 5.26 A 5.29 A 5.3 A 5.33 A 5.35 A 5.37 A
Open Circuit Voltage (Voc)
0.628 V 0.628 V 0.628 V 0.629 V 0.63 V 0.63 V 0.63 V 0.631 V 0.632 V 0.632 V 0.633 V 0.633 V 0.634 V
Short Circuit Current (Isc)
5.56 A 5.57 A 5.58 A 5.59 A 5.6 A 5.63 A 5.66 A 5.69 A 5.71 A 5.71 A 5.72 A 5.72 A 5.73 A
Cell Efficiency
17-17.09 % 17.1-17.19 % 17.2-17.29 % 17.3-17.39 % 17.4-17.49 % 17.5-17.59 % 17.6-17.69 % 17.7-17.79 % 17.8-17.89 % 17.9-17.99 % 18-18.09 % 18.1-18.19 % 18.2-18.29 %
Fill Factor (FF)
75.52 % 75.82 % 75.98 % 76.17 % 76.5 % 76.67 % 76.56 % 76.62 % 76.81 % 77.1 % 77.28 % 77.57 % 77.75 %
Thermal Ratings  
Temperature Coefficient of Pmax -0.45 %/˚C
Temperature Coefficient of Voc -0.44 %/˚C
Temperature Coefficient of Isc -0.044 %/˚C
Intensity Dependence
Intensity
Voc
Vmpp
1000 W/m2
1
--
800 W/m2
0.989
--
500 W/m2
0.968
--
300 W/m2
0.946
--
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MOSPEC Semiconductor Corporation

No.76, Chungshan Road, Hsinshin Township, Tainan County, Taiwan, R.O
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