Multi 3 Bus Bars

Sino-American Silicon Products Inc.
Cell Type: Polycrystalline
Power Range: 4~4.3 Wp
Region: Taiwan Taiwan
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From $0.257 / Wp
  • Maximum Power: 4.16 W
  • Cell Type: Polycrystalline
  • Dimensions: 156×156 mm
  • DIAGONAL: 220±20 mm
  • Cell Thickness: 200 µm
  • Pmax: 4.16 W
  • Vmpp: 0.518 V
  • Impp: 8.037 A
  • Voc: 0.621 V
  • Isc: 8.555 A
  • FF: 78.32 %
  • Efficiency: 17.1-17.2 %
  • No. of Busbars: 3
  • Busbar Material: --
  • No. of Soldering Pads: 3
  • Soldering Pad Material: Silver
  • AR Coating: Silicon nitride

Product Characteristics

Model No.
Multi 3 Bus Bars 4 Multi 3 Bus Bars 4.03 Multi 3 Bus Bars 4.05 Multi 3 Bus Bars 4.08 Multi 3 Bus Bars 4.10 Multi 3 Bus Bars 4.12 Multi 3 Bus Bars 4.15 Multi 3 Bus Bars 4.17 Multi 3 Bus Bars 4.20 Multi 3 Bus Bars 4.22 Multi 3 Bus Bars 4.25 Multi 3 Bus Bars 4.27 Multi 3 Bus Bars 4.30
Product Characteristics  
Cell Technology Polycrystalline
Dimensions 156×156 mm
Diagonal 220 mm
Cell Thickness 180/200 ± 30 µm
Front Surface (-)  
No. of Busbars 3
Electrical Data at STC  
Maximum Power (Pmax)
4 W 4.03 W 4.05 W 4.08 W 4.1 W 4.12 W 4.15 W 4.17 W 4.2 W 4.22 W 4.25 W 4.27 W 4.3 W
Voltage at Maximum Power Point (Vmpp)
0.513 V 0.515 V 0.517 V 0.519 V 0.52 V 0.521 V 0.523 V 0.525 V 0.527 V 0.527 V 0.528 V 0.528 V 0.529 V
Current at Maximum Power Point (Impp)
7.801 A 7.822 A 7.84 A 7.859 A 7.884 A 7.915 A 7.933 A 7.951 A 7.972 A 8.01 A 8.043 A 8.089 A 8.12 A
Open Circuit Voltage (Voc)
0.6131 V 0.6147 V 0.6164 V 0.6182 V 0.6197 V 0.6207 V 0.6222 V 0.6235 V 0.6244 V 0.6262 V 0.6271 V 0.6278 V 0.6285 V
Short Circuit Current (Isc)
8.315 A 8.335 A 8.352 A 8.369 A 8.395 A 8.423 A 8.441 A 8.456 A 8.476 A 8.522 A 8.558 A 8.578 A 8.597 A
Cell Efficiency
16.4-16.5 % 16.5-16.6 % 16.6-16.7 % 16.7-16.8 % 16.8-16.9 % 16.9-17 % 17-17.1 % 17.1-17.2 % 17.2-17.3 % 17.3-17.4 % 17.4-17.5 % 17.5-17.6 % 17.6-17.7 %
Fill Factor (FF)
78.5 % 78.62 % 78.73 % 78.84 % 78.8 % 78.88 % 79 % 79.17 % 79.38 % 79.1 % 79.13 % 79.31 % 79.5 %
Thermal Ratings  
Temperature Coefficient of Pmax -0.389 %/˚C
Temperature Coefficient of Voc -0.3199 %/˚C
Temperature Coefficient of Isc 0.052 %/˚C
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Sino-American Silicon Products Inc.

No. 8, Industrial East Road 2, Hsinchu Science Park
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2 More Series From Sino-American Silicon Products Inc.

  • Mono 2 Bus Bars
    4.36~4.6 Wp Monocrystalline
  • Mono 3 Bus Bars
    4.36~4.65 Wp Monocrystalline