Cell Type: | Polycrystalline |
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Power Range: | 3.942~4.429 Wp |
Region: | China |
Model No. |
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Product Characteristics | ||||||||||
Cell Technology | Polycrystalline | |||||||||
Dimensions | 156.75×156.75 mm | |||||||||
Diagonal | 220±0.5 mm | |||||||||
Cell Thickness | 200 ± 30 µm | |||||||||
Front Surface (-) | ||||||||||
No. of Busbars | 3 | |||||||||
Busbar Width | 1.1 mm | |||||||||
Busbar Material | Silver | |||||||||
Anti Reflection Coating | Silicon nitride | |||||||||
Back Surface (+) | ||||||||||
No. of Soldering Pads | 3 | |||||||||
Soldering Pad Width | 2.5 mm | |||||||||
Soldering Pad Material | Silver | |||||||||
Back Surface Field (BSF) | Aluminium | |||||||||
Electrical Data at STC | ||||||||||
Maximum Power (Pmax) |
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Voltage at Maximum Power Point (Vmpp) |
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Current at Maximum Power Point (Impp) |
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Open Circuit Voltage (Voc) |
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Short Circuit Current (Isc) |
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Cell Efficiency |
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Fill Factor (FF) |
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Thermal Ratings | ||||||||||
Temperature Coefficient of Pmax | -0.4085 %/˚C | |||||||||
Temperature Coefficient of Voc | -0.3324 %/˚C | |||||||||
Temperature Coefficient of Isc | 0.0516 %/˚C | |||||||||
Intensity Dependence |
Intensity
Voc
Vmpp
1000 W/m2
1
1
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