Cell Type: | Monocrystalline |
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Power Range: | 2.54~4.53 Wp |
Region: | China |
Model No. |
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Product Characteristics | |||||||||
Cell Technology | Monocrystalline | ||||||||
Dimensions | 125×125 mm | ||||||||
Diagonal | 210±0.50 mm | ||||||||
Cell Thickness | 180/190 ± 30 µm | ||||||||
Front Surface (-) | |||||||||
No. of Busbars | 2 | ||||||||
Busbar Width | 1.8 mm | ||||||||
Busbar Material | Silver | ||||||||
Anti Reflection Coating | Silicon nitride | ||||||||
Back Surface (+) | |||||||||
No. of Soldering Pads | 3 | ||||||||
Soldering Pad Width | 2 mm | ||||||||
Soldering Pad Material | Silver | ||||||||
Back Surface Field (BSF) | Aluminium | ||||||||
Electrical Data at STC | |||||||||
Maximum Power (Pmax) |
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Voltage at Maximum Power Point (Vmpp) |
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Current at Maximum Power Point (Impp) |
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Open Circuit Voltage (Voc) |
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Short Circuit Current (Isc) |
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Cell Efficiency |
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Thermal Ratings | |||||||||
Temperature Coefficient of Pmax | -0.42 %/˚C | ||||||||
Temperature Coefficient of Voc | -0.33 %/˚C | ||||||||
Temperature Coefficient of Isc | 0.43 %/˚C | ||||||||
Intensity Dependence |
Intensity
Voc
Vmpp
1000 W/m2
1
1
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