Cell Type: | Polycrystalline |
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Power Range: | 4.472~4.619 Wp |
Region: | China |
Model No. |
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Product Characteristics | |||||
Cell Technology | Polycrystalline | ||||
Dimensions | 156.75×156.75 mm | ||||
Diagonal | 220.2 mm | ||||
Cell Thickness | 180/200 ± 20 µm | ||||
Front Surface (-) | |||||
No. of Busbars | 5 | ||||
Busbar Width | 0.7 mm | ||||
Busbar Material | Aluminium | ||||
Anti Reflection Coating | Silicon nitride | ||||
Back Surface (+) | |||||
No. of Soldering Pads | 5 | ||||
Soldering Pad Width | 1.8 mm | ||||
Soldering Pad Material | Aluminium | ||||
Back Surface Field (BSF) | Aluminium | ||||
Electrical Data at STC | |||||
Maximum Power (Pmax) |
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Voltage at Maximum Power Point (Vmpp) |
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Current at Maximum Power Point (Impp) |
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Open Circuit Voltage (Voc) |
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Short Circuit Current (Isc) |
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Cell Efficiency |
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Fill Factor (FF) |
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Thermal Ratings | |||||
Temperature Coefficient of Pmax | -0.3718 %/˚C | ||||
Temperature Coefficient of Voc | -0.3001 %/˚C | ||||
Temperature Coefficient of Isc | 0.0463 %/˚C |