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Black Silicon Cell(5BB)

Black Silicon Cell(5BB)

Ningbo Fullstar Solaris Co., Ltd.
Cell Type: Polycrystalline
Power Range: 4.668~4.816 Wp
Region: China China
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Note: Your Enquiry will be sent directly to Ningbo Fullstar Solaris Co., Ltd..

Alternative Product

LNE-N10

LNE Energy
From €0.0584 / Wp
  • Maximum Power: 8.29 W
  • Cell Type: TOPCon
  • Dimensions: 182x182 mm
  • DIAGONAL: 247±0.25 mm
  • Cell Thickness: 140 µm
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Product Characteristics

Model No.
4.668W 4.693W 4.718W 4.742W 4.767W 4.791W 4.816W
Product Characteristics  
Cell Technology Polycrystalline
Dimensions 156.75×156.75 mm
Cell Thickness 200 ± 20 µm
Front Surface (-)  
No. of Busbars 5
Busbar Width 0.7±0.1 mm
Busbar Material Silver
Anti Reflection Coating Silicon nitride
Back Surface (+)  
No. of Soldering Pads 5
Soldering Pad Width 1.7±0.1 mm
Soldering Pad Material Silver
Back Surface Field (BSF) Aluminium
Electrical Data at STC  
Maximum Power (Pmax)
4.668 W 4.693 W 4.718 W 4.742 W 4.767 W 4.791 W 4.816 W
Voltage at Maximum Power Point (Vmpp)
0.545 V 0.547 V 0.548 V 0.55 V 0.552 V 0.561 V 0.562 V
Current at Maximum Power Point (Impp)
8.565 A 8.58 A 8.609 A 8.622 A 8.636 A 8.665 A 8.687 A
Open Circuit Voltage (Voc)
0.643 V 0.645 V 0.647 V 0.649 V 0.651 V 0.662 V 0.663 V
Short Circuit Current (Isc)
9.079 A 9.094 A 9.126 A 9.139 A 9.154 A 9.185 A 9.208 A
Cell Efficiency
19 % 19.1 % 19.2 % 19.3 % 19.4 % 19.5 % 19.6 %
Fill Factor (FF)
79.96 % 80.01 % 79.9 % 79.95 % 79.99 % 79.95 % 79.97 %
Thermal Ratings  
Temperature Coefficient of Pmax -0.36 %/˚C
Temperature Coefficient of Voc -0.36 %/˚C
Temperature Coefficient of Isc 0.06 %/˚C
Intensity Dependence
Intensity
Voc
Vmpp
1000 W/m2
1
--
900 W/m2
0.99
--
800 W/m2
0.99
--
500 W/m2
0.97
--
300 W/m2
0.94
--
200 W/m2
0.91
--
PDF  
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Ningbo Fullstar Solaris Co., Ltd.

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www.fullstar.hk
China
No. 66, Haichuan Road, Jiangbei, Ningbo, Zhejiang, 315032
Parent Company: Fuxing Group
Contact Manufacturer
Note: Your Enquiry will be sent directly to Ningbo Fullstar Solaris Co., Ltd..

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