Cell Type: | Polycrystalline |
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Power Range: | 4.28~4.48 Wp |
Region: | China |
Model No. |
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Product Characteristics | ||||||
Cell Technology | Polycrystalline | |||||
Dimensions | 156×156 mm | |||||
Diagonal | 220 mm | |||||
Cell Thickness | 200 ± 20 µm | |||||
Front Surface (-) | ||||||
No. of Busbars | 4 | |||||
Busbar Width | 1.1 mm | |||||
Busbar Material | Silver | |||||
Anti Reflection Coating | Silicon nitride | |||||
Back Surface (+) | ||||||
No. of Soldering Pads | 4 | |||||
Soldering Pad Width | 2.0 mm | |||||
Soldering Pad Material | Silver | |||||
Back Surface Field (BSF) | Aluminium | |||||
Electrical Data at STC | ||||||
Maximum Power (Pmax) |
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Voltage at Maximum Power Point (Vmpp) |
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Current at Maximum Power Point (Impp) |
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Open Circuit Voltage (Voc) |
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Short Circuit Current (Isc) |
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Cell Efficiency |
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Fill Factor (FF) |
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Thermal Ratings | ||||||
Temperature Coefficient of Pmax | -0.45 %/˚C | |||||
Temperature Coefficient of Voc | -0.35 %/˚C | |||||
Temperature Coefficient of Isc | 0.05 %/˚C |