Cell Type: | Polycrystalline |
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Power Range: | 4.42~4.66 Wp |
Region: | China |
Model No. |
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Product Characteristics | ||||||||||||
Cell Technology | Polycrystalline | |||||||||||
Dimensions | 156.75×156.75 mm | |||||||||||
Diagonal | 220.2±0.5 mm | |||||||||||
Cell Thickness | 200 ± 200 µm | |||||||||||
Front Surface (-) | ||||||||||||
No. of Busbars | 5 | |||||||||||
Busbar Width | 0.7 mm | |||||||||||
Busbar Material | Silver | |||||||||||
Anti Reflection Coating | Silicon nitride | |||||||||||
Back Surface (+) | ||||||||||||
No. of Soldering Pads | 5 | |||||||||||
Soldering Pad Width | 2.0 mm | |||||||||||
Soldering Pad Material | Silver | |||||||||||
Back Surface Field (BSF) | Aluminium | |||||||||||
Electrical Data at STC | ||||||||||||
Maximum Power (Pmax) |
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Voltage at Maximum Power Point (Vmpp) |
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Current at Maximum Power Point (Impp) |
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Open Circuit Voltage (Voc) |
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Short Circuit Current (Isc) |
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Cell Efficiency |
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Fill Factor (FF) |
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Thermal Ratings | ||||||||||||
Temperature Coefficient of Pmax | -0.42 %/˚C | |||||||||||
Temperature Coefficient of Voc | -0.327 %/˚C | |||||||||||
Temperature Coefficient of Isc | 0.055 %/˚C | |||||||||||
Intensity Dependence |
Intensity
Voc
Vmpp
1000 W/m2
1
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800 W/m2
0.990
--
600 W/m2
0.977
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400 W/m2
0.960
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200 W/m2
0.928
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