Cell Type: | Polycrystalline |
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Power Range: | 4.45~4.58 Wp |
Region: | China |
Model No. |
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Product Characteristics | |||||||
Cell Technology | Polycrystalline | ||||||
Dimensions | 156.75×156.75 mm | ||||||
Diagonal | 220±0.25 mm | ||||||
Cell Thickness | 200 ± 20 µm | ||||||
Front Surface (-) | |||||||
No. of Busbars | 5 | ||||||
Busbar Width | 0.64 mm | ||||||
Busbar Material | Silver | ||||||
Anti Reflection Coating | Silicon nitride | ||||||
Back Surface (+) | |||||||
Back Surface Field (BSF) | Aluminium | ||||||
Electrical Data at STC | |||||||
Maximum Power (Pmax) |
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Voltage at Maximum Power Point (Vmpp) |
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Current at Maximum Power Point (Impp) |
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Open Circuit Voltage (Voc) |
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Short Circuit Current (Isc) |
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Cell Efficiency |
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Fill Factor (FF) |
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Thermal Ratings | |||||||
Temperature Coefficient of Pmax | -0.46 %/˚C | ||||||
Temperature Coefficient of Voc | -0.346 %/˚C | ||||||
Temperature Coefficient of Isc | 0.036 %/˚C | ||||||
Intensity Dependence |
Intensity
Voc
Vmpp
1000 W/m2
0.64
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