| Model No. |
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|---|---|---|---|---|---|---|---|---|---|
| Cell Technology | HJT | ||||||||
| Cell Thickness | 110/120 ± 20 µm | ||||||||
| No. of Busbars | 20 | ||||||||
| No. of Soldering Pads | 20 | ||||||||
| Maximum Power (Pmax) |
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| Voltage at Maximum Power Point (Vmpp) |
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| Current at Maximum Power Point (Impp) |
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| Open Circuit Voltage (Voc) |
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| Short Circuit Current (Isc) |
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| Cell Efficiency |
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| Fill Factor (FF) |
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| Temperature Coefficient of Pmax | -0.24 %/˚C | ||||||||
| Temperature Coefficient of Voc | -0.22 %/˚C | ||||||||
| Temperature Coefficient of Isc | 0.04 %/˚C | ||||||||
| Download Manufacturer's PDF | |||||||||
Anhui Huasun Energy Co., Ltd. (“Huasun”), a global leader in heterojunction (HJT) solar technology, specialises in R&D and mass production of ultra-high-efficiency n-type HJT products. It operates a complete value chain from silicon ingots, wafers, and cells to modules.
As the world’s largest HJT manufacturer, it has supplied 16 GW of products to over 80 countries across Asia-Pacific, Europe, the Middle East and Africa, as well as Latin America. By advancing HJT technology, Huasun promotes the commercialisation of HJT-perovskite tandem solutions to lower costs and enhance efficiency.
Dedicated to making solar the world’s main energy source, the company offers high-performance, cost-efficient clean energy solutions, maximizing returns for global clients.