PE-SiS-M157-5B

Prodigy Electronics Ltd
Fill Factor
81.11 - 81.64 %
Cell Efficiency
21.2 - 22.4 %
Technology
Monocrystalline
Power Range
5.18 - 5.45 Wp
Region
Hong Kong Hong Kong
Dimension
156.75×156.75 mm
Cell Thickness
190 ± 20 µm
Contact Manufacturer
Note: Your Enquiry will be sent directly to Prodigy Electronics Ltd.
156.75 × 156.75 mm format, ±0.25 mm
Silicon thickness 190 µm ± 20 µm
PERC rear contact with AlOx/SiNx dual layer

Product Characteristics

Model No.
5.18 5.2 5.23 5.25 5.28 5.3 5.33 5.35 5.37 5.4 5.42 5.45
Type Solar Cells
Cell Technology Monocrystalline
Dimensions 156.75×156.75 mm
Cell Thickness 190 ± 20 µm
 
Anti Reflection Coating Silicon nitride
 
Maximum Power (Pmax)
5.18 W 5.2 W 5.23 W 5.25 W 5.28 W 5.3 W 5.33 W 5.35 W 5.37 W 5.4 W 5.42 W 5.45 W
Voltage at Maximum Power Point (Vmpp)
0.568 V 0.569 V 0.571 V 0.572 V 0.575 V 0.576 V 0.577 V 0.578 V 0.578 V 0.579 V 0.579 V 0.581 V
Current at Maximum Power Point (Impp)
9.121 A 9.149 A 9.157 A 9.181 A 9.186 A 9.201 A 9.232 A 9.258 A 9.3 A 9.326 A 9.368 A 9.378 A
Open Circuit Voltage (Voc)
0.6651 V 0.6657 V 0.666 V 0.6674 V 0.6702 V 0.6715 V 0.672 V 0.673 V 0.6739 V 0.6751 V 0.677 V 0.679 V
Short Circuit Current (Isc)
9.601 A 9.611 A 9.633 A 9.657 A 9.661 A 9.675 A 9.715 A 9.742 A 9.771 A 9.798 A 9.813 A 9.829 A
Cell Efficiency
21.2-21.3 % 21.3-21.4 % 21.4-21.5 % 21.5-21.6 % 21.6-21.7 % 21.7-21.8 % 21.8-21.9 % 21.9-22 % 22-22.1 % 22.1-22.2 % 22.2-22.3 % 22.3-22.4 %
Fill Factor (FF)
81.11 % 81.33 % 81.5 % 81.51 % 81.55 % 81.58 % 81.59 % 81.62 % 81.63 % 81.63 % 81.64 % 81.64 %
 
Temperature Coefficient of Pmax -0.42 %/˚C
Temperature Coefficient of Voc -0.32 %/˚C
Temperature Coefficient of Isc 0.04 %/˚C
Intensity Dependence
Intensity
Voc
Vmpp
1000 W/m2
1
1
 
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Company Logo

Prodigy Electronics Ltd

Click to show company phone
https://www.prodigyelectronics.com
Hong Kong Hong Kong
Unit F, 7th Floor, World Tech Centre, 95 How Ming Road, Kwun Tong, Kowloon
location
Note: Your Enquiry will be sent directly to Prodigy Electronics Ltd.

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