M85-01

Nanofold India
Fill Factor
79.09 - 80.2 %
Cell Efficiency
18.8 - 20 %
Technology
Monocrystalline
Power Range
4.593 - 4.886 Wp
Region
India India
Dimension
156.75×156.75 mm
Cell Thickness
200 ± 20 µm
No. of Busbars
5
Busbar Width
1.1 mm
Soldering Pad Width
1.8 mm
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Note: Your Enquiry will be sent directly to Nanofold India.

Product Characteristics

Model No.
18.8 19.0 19.1 19.2 19.3 19.4 19.5 19.6 19.7 19.8 19.9 20
Cell Technology Monocrystalline
Dimensions 156.75×156.75 mm
Diagonal 210±0.5 mm
Cell Thickness 200 ± 20 µm
 
No. of Busbars 5
Busbar Width 1.1 mm
Busbar Material Silver
Anti Reflection Coating Silicon nitride
 
Soldering Pad Width 1.8 mm
Back Surface Field (BSF) Aluminium
 
Maximum Power (Pmax)
4.593 W 4.642 W 4.666 W 4.691 W 4.715 W 4.74 W 4.764 W 4.789 W 4.813 W 4.837 W 4.862 W 4.886 W
Voltage at Maximum Power Point (Vmpp)
0.541 V 0.545 V 0.546 V 0.547 V 0.548 V 0.549 V 0.549 V 0.549 V 0.549 V 0.548 V 0.549 V 0.549 V
Current at Maximum Power Point (Impp)
8.49 A 8.52 A 8.55 A 8.58 A 8.61 A 8.64 A 8.67 A 8.72 A 8.77 A 8.82 A 8.86 A 8.9 A
Open Circuit Voltage (Voc)
0.634 V 0.635 V 0.636 V 0.636 V 0.637 V 0.638 V 0.639 V 0.64 V 0.641 V 0.642 V 0.643 V 0.644 V
Short Circuit Current (Isc)
9.16 A 9.2 A 9.23 A 9.25 A 9.28 A 9.3 A 9.33 A 9.35 A 9.38 A 9.41 A 9.44 A 9.46 A
Cell Efficiency
18.8 % 19.0 % 19.1 % 19.2 % 19.3 % 19.4 % 19.5 % 19.6 % 19.7 % 19.8 % 19.9 % 20 %
Fill Factor (FF)
79.09 % 79.48 % 79.52 % 79.78 % 79.82 % 79.94 % 79.84 % 80 % 80.08 % 80.01 % 80.14 % 80.2 %
 
Temperature Coefficient of Pmax -0.42 %/˚C
Temperature Coefficient of Voc -0.33 %/˚C
Temperature Coefficient of Isc 0.05 %/˚C
Intensity Dependence
Intensity
Voc
Vmpp
1000 W/m2
1.0
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Company Logo

Nanofold India

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nanofold.net/
India India
3, Bellary Road, Opp. White Petals Palace, RMV Extension, Sadashivanagar, Bangalore, Karnataka, 560080
location
Note: Your Enquiry will be sent directly to Nanofold India.

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