Cell Type: | Monocrystalline |
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Power Range: | 4.667~4.886 Wp |
Region: | China |
Model No. |
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Product Characteristics | |||||||||||
Cell Technology | Monocrystalline | ||||||||||
Dimensions | 156.75×156.75 mm | ||||||||||
Diagonal | 210±0.5 mm | ||||||||||
Cell Thickness | 200 ± 30 µm | ||||||||||
Front Surface (-) | |||||||||||
No. of Busbars | 4 | ||||||||||
Busbar Width | 1.0 mm | ||||||||||
Busbar Material | Silver | ||||||||||
Anti Reflection Coating | Silicon nitride | ||||||||||
Back Surface (+) | |||||||||||
No. of Soldering Pads | 3 | ||||||||||
Soldering Pad Width | 2.0 mm | ||||||||||
Soldering Pad Material | Silver | ||||||||||
Back Surface Field (BSF) | Aluminium | ||||||||||
Electrical Data at STC | |||||||||||
Maximum Power (Pmax) |
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Voltage at Maximum Power Point (Vmpp) |
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Current at Maximum Power Point (Impp) |
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Open Circuit Voltage (Voc) |
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Short Circuit Current (Isc) |
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Cell Efficiency |
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Fill Factor (FF) |
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Thermal Ratings | |||||||||||
Temperature Coefficient of Pmax | -0.396 %/˚C | ||||||||||
Temperature Coefficient of Voc | -0.319 %/˚C | ||||||||||
Temperature Coefficient of Isc | 0.045 %/˚C | ||||||||||
Intensity Dependence |
Intensity
Voc
Vmpp
1000 W/m2
1
1
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