Cell Type: | Monocrystalline |
---|---|
Power Range: | 4.495~4.667 Wp |
Region: | China |
Model No. |
|
||||||
---|---|---|---|---|---|---|---|
Product Characteristics | |||||||
Cell Technology | Monocrystalline | ||||||
Dimensions | 156.75×156.75 mm | ||||||
Diagonal | 210 mm | ||||||
Cell Thickness | 180/200 ± 20 µm | ||||||
Front Surface (-) | |||||||
No. of Busbars | 4 | ||||||
Busbar Width | 1 mm | ||||||
Busbar Material | Aluminium | ||||||
Anti Reflection Coating | Silicon nitride | ||||||
Back Surface (+) | |||||||
No. of Soldering Pads | 4 | ||||||
Soldering Pad Width | 2.1 mm | ||||||
Soldering Pad Material | Aluminium | ||||||
Back Surface Field (BSF) | Aluminium | ||||||
Electrical Data at STC | |||||||
Maximum Power (Pmax) |
|
||||||
Voltage at Maximum Power Point (Vmpp) |
|
||||||
Current at Maximum Power Point (Impp) |
|
||||||
Open Circuit Voltage (Voc) |
|
||||||
Short Circuit Current (Isc) |
|
||||||
Cell Efficiency |
|
||||||
Fill Factor (FF) |
|
||||||
Thermal Ratings | |||||||
Temperature Coefficient of Pmax | -0.4 %/˚C | ||||||
Temperature Coefficient of Voc | -2 %/˚C | ||||||
Temperature Coefficient of Isc | 3.7 %/˚C |