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  2. 6.5W trip-junction Amorphous Silicon Cell
6.5W trip-junction Amorphous Silicon Cell
6.5W trip-junction Amorphous Silicon Cell
6.5W trip-junction Amorphous Silicon Cell

6.5W trip-junction Amorphous Silicon Cell

Xunlight (Kunshan) Co., Ltd.
Cell Type: HJT
Power Range: 6.5 Wp
Region: China China

Alternative Product

N-TOPCon-182-16BB

Solar N Plus
From €0.0487 / Wp
  • Maximum Power: 8.3 W
  • Cell Type: TOPCon
  • Dimensions: 182x182 mm
  • DIAGONAL: 247±0.25 mm
  • Cell Thickness: 140 µm
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Product Characteristics

Model No.
6.5W a-Si
Product Characteristics  
Cell Technology HJT
Dimensions 156.75×156.75 mm
Cell Thickness 147 µm
Electrical Data at STC  
Maximum Power (Pmax)
6.5 W
Voltage at Maximum Power Point (Vmpp)
1.6 V
Current at Maximum Power Point (Impp)
4.09 A
Open Circuit Voltage (Voc)
2.2 V
Short Circuit Current (Isc)
5.1 A
Cell Efficiency
10-10.4 %
Thermal Ratings  
Temperature Coefficient of Pmax -0.23 %/˚C
Temperature Coefficient of Voc -0.38 %/˚C
Temperature Coefficient of Isc 0.12 %/˚C

Xunlight (Kunshan) Co., Ltd.

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www.xunlightchina.com
China
No. 199, Yuanfeng Road, Yuyuan Town, Kunshan, Jiangsu

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Alex Yang Sales & Marketing Manager